| 摘要 |
The method for forming palladium silicide nanowires consists in the 1st stage, which involves physical vapor deposition of fullerene (C60) and palladium acetate - precursors of the initial layer, in depositing a composite carbon-palladium film, containing Pd nanograins in the carbon matrix, onto a Si substrate. The following 2nd stage consists in modifying the composite film by way of chemical vapour deposition, with xylene and temperature as modifying factors. The modification results in the formation of palladium silicide nanowires, subsequently isolated by annealing of the carbon matrix in the air, in limited areas on the Si substrate. The annealing temperature for the carbon matrix does not exceed 750 °C. The process of physical vapor deposition takes place under dynamic vacuum of at least ~10-5 Torr and the Si substrate temperature of up to 110 °C, with two separated sources of fullerene (C60) and palladium acetate (PdC4H6O4) - precursors of the initial layer. The process of chemical vapour deposition takes place under atmospheric pressure and in the flow of argon as a carrier gas for xylene vapours, with the temperature of the modification process of up to 700 °C and duration of up to 60 minutes. |
