发明名称 ENHANCED HYDROGEN BARRIER ENCAPSULATION METHOD FOR THE CONTROL OF HYDROGEN INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS IN AN F-RAM PROCESS
摘要 An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.
申请公布号 US2015115408(A1) 申请公布日期 2015.04.30
申请号 US201414514008 申请日期 2014.10.14
申请人 Cypress Semiconductor Corporation 发明人 Sun Shan;Davenport Tom E.
分类号 H01L49/02;H01L27/115;H01L23/29 主分类号 H01L49/02
代理机构 代理人
主权项
地址 San Jose CA US