发明名称 |
ENHANCED HYDROGEN BARRIER ENCAPSULATION METHOD FOR THE CONTROL OF HYDROGEN INDUCED DEGRADATION OF FERROELECTRIC CAPACITORS IN AN F-RAM PROCESS |
摘要 |
An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation. |
申请公布号 |
US2015115408(A1) |
申请公布日期 |
2015.04.30 |
申请号 |
US201414514008 |
申请日期 |
2014.10.14 |
申请人 |
Cypress Semiconductor Corporation |
发明人 |
Sun Shan;Davenport Tom E. |
分类号 |
H01L49/02;H01L27/115;H01L23/29 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
San Jose CA US |