| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for suppressing deformation of a mask obtained by patterning a block copolymer.SOLUTION: An etching method includes: a step (a) of forming a self-organizable block copolymer layer containing a first polymer and a second polymer on an intermediate layer provided on the layer to be etched; a step (b) of processing a workpiece so as to form a first region containing the first polymer and a second region containing the second polymer from the block copolymer layer; a step (c) of forming a mask by etching the second region and the intermediate layer directly below the second region after the step (b) of processing the workpiece; a step (d) of forming a protection film on the mask by generating plasma of a process gas containing a silicon tetrachloride gas and an oxygen gas in a processing container of a plasma processing device housing the workpiece after the step (c) of forming the mask; and a step (e) of etching the layer to be etched after the step (d) of forming the protection film. |
