| 发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS |
| 摘要 |
A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material. |
| 申请公布号 |
US2015114930(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414527536 |
申请日期 |
2014.10.29 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
NONAKA Ryo;SATO Masanori;YABUMOTO Natsuki;TAKAYAMA Takamitsu;HARADA Akitoshi;SASAKI Junichi;HANAOKA Hidetoshi |
| 分类号 |
H01J37/32;C23C4/12;C23C14/34;C23F4/00 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing method comprising:
attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material. |
| 地址 |
Tokyo JP |
