SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A semiconductor device and a manufacturing method therefor. The semiconductor device at least comprises: a light-emitting epitaxial overlapped layer which has two primary surfaces, i.e. an upper primary surface and a lower primary surface; a first conducting layer (210) formed on a first surface of the light-emitting epitaxial overlapped layer; a first encapsulation layer (310) coating the first conducting layer (210); a second conducting layer (220) formed on a second surface of the light-emitting epitaxial overlapped layer; and a second encapsulation layer (320) coating the second conducting layer (220), wherein the first encapsulation layer and the second encapsulation layer (310, 320) protect the semiconductor device. By means of the method, manufacturing and encapsulation are directly conducted at the clip process end, which can effectively increase the yield and reduce production costs.