发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a non-linear element (e.g., diode) of a low reverse saturation current.SOLUTION: A non-linear element comprises, for example: a first electrode provided on a substrate; an oxide semiconductor film which is provided on the first electrode in contact with each other and has a hydrogen concentration of 5×10atoms/cmor less detected by secondary ion mass spectrometry; a second electrode provided on the oxide semiconductor film in contact with each other; a gate insulation film which covers the first electrode, the oxide semiconductor film and the second electrode; and a plurality of third electrodes which are provided in contact with the gate insulation film and opposed to each other across the first electrode, the oxide semiconductor film and the second electrode, in which the plurality of third electrodes are connected with the first electrode or the second electrode.
申请公布号 JP2015084439(A) 申请公布日期 2015.04.30
申请号 JP20140251655 申请日期 2014.12.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L29/786;H01L21/28;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/08;H01L27/088;H01L29/861;H01L29/868 主分类号 H01L29/786
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