| 发明名称 |
Semiconductor Device and Integrated Apparatus Comprising the same |
| 摘要 |
The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation area which includes a p-region and a n-region on the buffer layer, and a transistor cell on the compensation area. The transistor cell includes a source region, a body region, a gate electrode and a gate dielectric formed at least between the gate electrode and the body region. The gate dielectric has a thickness in a range of 12 nm to 50 nm. |
| 申请公布号 |
US2015116031(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414527815 |
申请日期 |
2014.10.30 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Wahl Uwe;Willmeroth Armin |
| 分类号 |
H01L29/78;H02M3/335;H02M1/42;H01L29/40 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a buffer layer on the substrate; a compensation area which comprises a p-region and a n-region on the buffer layer; and a transistor cell on the compensation area, the transistor cell comprising a source region, a body region, a gate electrode and a gate dielectric formed at least between the gate electrode and the body region, wherein the gate dielectric has a thickness in a range of 12 nm to 50 nm. |
| 地址 |
Villach AT |
