High Voltage Semiconductor Power Switching Device

摘要

A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.

主权项

1. A three terminal high voltage Darlington bipolar transistor power switching device having a connector terminal, a base terminal, an emitter terminal and including the following components:
a first and a second high voltage bipolar transistor, each with a collector, a base and an emitter with collectors connected together serving as the collector terminal for the power switching device, the base of the first high voltage bipolar transistor serving as the base terminal of the power switching device, the emitter of the first high voltage bipolar transistor connecting to the base of the second high voltage bipolar transistor, and the emitter of the second high voltage bipolar transistor serving as the emitter terminal of the power switching device; and a diode having an anode and a cathode with the anode connected to transistor, or the base of the second high voltage bipolar transistor, and the cathode connected to the base terminal of the power switching device.