SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

摘要

A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole to the first main surface through a side surface of the through hole; coating an organic member on the insulation film on the side surface of the through hole and the first main surface; removing an air bubble in the organic member and between the organic member and the insulation film; and forming a first opening portion in the organic member.

主权项

1. A method of producing a semiconductor device, comprising the steps of:
forming a through hole in a semiconductor substrate, said semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole on a side of the second main surface to the first main surface through a side surface of the through hole; coating an organic member on at least the insulation film on the side surface of the through hole and the insulation film on the first main surface; removing an air bubble in the organic member and an air bubble between the organic member and the insulation film; and forming a first opening portion in the organic member.