Systems and Methods for Sub-Zero Threshold Characterization in a Memory Cell

摘要

Systems and method relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory.

主权项

1. A memory system, the system comprising:
a memory cell characterization circuit operable to:
write a first cell of a solid state memory device to a negative voltage;write a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, and wherein the second cell interferes with the first cell such that the voltage on the first cell is the negative voltage offset by an interference voltage;characterize a voltage level on the first cell to yield an interim voltage; andsubtract the interference voltage from the interim voltage to yield an actual voltage.