| 摘要 |
According to one embodiment, a semiconductor light emitting device (1a-1h), includes: a semiconductor layer (15) including a first face (15a), a second face opposite to the first face, a side face, and a light emitting layer (12a); a p-side electrode (16) provided on the second face; an n-side electrode (17) provided on the side face; a first p-side metal layer (23) provided on the p-side electrode and connected electrically with the p-side electrode; a first n-side metal layer (26) provided on the periphery of the n-side electrode and connected electrically with the n-side electrode; a first insulating layer (27) provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer (29) connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer (30) provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer and connected electrically with the first n-side metal layer. |
