| 发明名称 |
METHOD FOR CONTROLLING CONCENTRATION OF DONOR IN GA2O3-BASED SINGLE CRYSTAL |
| 摘要 |
A β-Ga2O3-based single crystal, including a first region that has side and bottom surfaces and is controlled so as to have a first donor concentration; and a second region that surrounds the side and bottom surfaces of the first region and is controlled so as to have a second donor concentration lower than the first donor concentration. |
| 申请公布号 |
US2015115279(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201514589763 |
申请日期 |
2015.01.05 |
| 申请人 |
TAMURA CORPORATION |
发明人 |
Sasaki Kohei |
| 分类号 |
H01L29/24;H01L29/06;H01L29/36 |
主分类号 |
H01L29/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A β-Ga2O3-based single crystal, comprising:
a first region that has side and bottom surfaces and is controlled so as to have a first donor concentration; and a second region that surrounds the side and bottom surfaces of the first region and is controlled so as to have a second donor concentration lower than the first donor concentration. |
| 地址 |
Tokyo JP |
