| 摘要 |
A semiconductor device includes a first compound semiconductor layer, a second compound semiconductor layer having a larger band gap than that of the first compound semiconductor layer, a p-type third compound semiconductor layer disposed above a portion of the second compound semiconductor layer, a p-type fourth compound semiconductor layer disposed above the third compound semiconductor layer and having a higher resistance than that of the third compound semiconductor layer, and a gate electrode disposed above the fourth compound semiconductor layer. |
