| 摘要 |
Provided is a semiconductor device, comprising a nonvolatile memory unit further comprising a plurality of chain memory arrays (CY), and a control circuit which controls access to the nonvolatile memory unit. The control circuit treats the plurality of chain memory arrays (CY) which are positioned adjacent to each other as a write region, treats the chain memory arrays which are positioned adjacent to the outer circumference of the write region as dummy chain memory arrays (DCY), and when batch deleting the write region, does not carry out the delete operation upon the dummy chain memory arrays (DCY). When the write region is batch deleted, the dummy chain memory arrays (DCY) function to reduce heat disturbance effects. |
