发明名称 MASKLESS HYBRID LASER SCRIBING AND PLASMA ETCHING WAFER DICING PROCESS
摘要 Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.
申请公布号 WO2015060968(A1) 申请公布日期 2015.04.30
申请号 WO2014US56848 申请日期 2014.09.22
申请人 APPLIED MATERIALS, INC. 发明人 LEI, WEI-SHENG;EATON, BRAD;PAPANU, JAMES S.;KUMAR, AJAY
分类号 H01L21/301;H01L21/3065 主分类号 H01L21/301
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