| 摘要 |
<p>Provided is a plasma processing apparatus using microwave. The apparatus has a seedling tray, a focus ring, a first tank shape unit, a ring-shaped unit, a second tank shape unit, and a chock unit. The focus ring is enlarged in a ring shape to cover an electrostatic chuck of the seedling tray. The first tank shape unit consists of a dielectric, is under the focus ring, and is enlarged along an outer circumference of a lower electrode. The ring-shaped unit consists of the dielectric, and is arranged between the focus ring and the first tank shape unit. The second tank shape unit has conductivity, and is enlarged along an outer circumference of the first tank shape unit. The chock unit consists of the dielectric, and inhibits microwave which passes through the focus ring and the ring-shaped unit and spreads the first tank shape unit. The chock unit protrudes from the first tank shape unit to the outside, and is enlarged in a ring shape. The second tank shape unit covers the chock unit.</p> |
