| 发明名称 | Method for fabricating synthetic antiferromagnetic (SAF) device | ||
| 摘要 | A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer. | ||
| 申请公布号 | US9015927(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201213566130 | 申请日期 | 2012.08.03 |
| 申请人 | International Business Machines Corporation | 发明人 | Abraham David W.;Gaidis Michael C. |
| 分类号 | G11B5/127;H04R31/00;G11C11/16 | 主分类号 | G11B5/127 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method for fabricating a synthetic antiferromagnetic (SAF) device, the method comprising: depositing a reference layer on a first tantalum layer and including: depositing a first cobalt iron boron (CoFeB) layer;depositing a second CoFeB layer on the first CoFeB layer;depositing a second Ta layer on the second CoFeB layer; depositing a magnesium oxide (MgO) spacer layer on the reference layer; and depositing a cap layer on the MgO spacer layer. | ||
| 地址 | Armonk NY US | ||