Method of programming a non-volatile resistive memory

摘要

The invention relates to a method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice and preferably at least ten times lower than the resistance of the memory cell in the original resistive state (original HRS), at least for a reading voltage interval, characterized in that the method comprises the following steps:
prior to mounting a component containing said matrix on a support,
programming the matrix by electrically bringing a plurality of cells from the original resistive state (original HRS) to said other resistive state (LRS, programmed HRS),leaving the other memory cells in the original resistive state (original HRS) thereof;mounting said matrix on a support, with the step of mounting comprising at least one of the following steps: a step of brazing, a step of welding.

主权项

1. A method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice and preferably at least ten times lower than the resistance of the memory cell in the original resistive state (original HRS), at least for a reading voltage interval, characterized in that the method comprises the following steps:
prior to mounting a component containing said matrix on a support,
programming the matrix by electrically bringing a plurality of cells (320) from the original resistive state (original HRS) to said other resistive state leaving the other memory cells in the original resistive state (original HRS) thereof; mounting said matrix on a support, during the step of assembling the memory cells being submitted to a temperature of at least 240° C.