Magnetoresistive element and magnetic memory

摘要

According to one embodiment, a magnetoresistive element includes a storage layer having a perpendicular and variable magnetization, a reference layer having a perpendicular and invariable magnetization, a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer, a first nonmagnetic layer between the storage layer and the reference layer, and a second nonmagnetic layer between the reference layer and the shift adjustment layer. A switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, and a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer.

主权项

1. A magnetoresistive element comprising:
a storage layer having a perpendicular and variable magnetization; a reference layer having a perpendicular and invariable magnetization; a shift adjustment layer having a perpendicular and invariable magnetization in a direction opposite to a magnetization of the reference layer; a first nonmagnetic layer between the storage layer and the reference layer; and a second nonmagnetic layer between the reference layer and the shift adjustment layer, wherein a magnetization reversal of the storage layer is performed by a spin injection writing, a switching magnetic field of the reference layer is equal to or smaller than a switching magnetic field of the storage layer, a magnetic relaxation constant of the reference layer is larger than a magnetic relaxation constant of the storage layer, and an energy barrier of a magnetization reversal of the reference layer is larger than an energy barrier of the magnetization reversal of the storage layer.