Multiple step anneal method and semiconductor formed by multiple step anneal

摘要

A method of annealing a semiconductor and a semiconductor. The method of annealing including heating the semiconductor to a first temperature for a first period of time sufficient to remove physically-adsorbed water from the semiconductor and heating the semiconductor to a second temperature, the second temperature being greater than the first temperature, for a period of time sufficient to remove chemically-adsorbed water from the semiconductor. A semiconductor device including a plurality of metal conductors, and a dielectric including regions separating the plurality of metal conductors, the regions including an upper interface and a lower bulk region, the upper interface having a density greater than a density of the lower bulk region.

主权项

1. A method of annealing a semiconductor device including a dielectric layer having a lower bulk region and an upper interface region formed on the lower bulk region, the method comprising:
providing the semiconductor device; heating the semiconductor device to a first temperature for a first period of time sufficient to remove substantially an entirety of physically-adsorbed water from the semiconductor device; and after the heating of the semiconductor device to the first temperature, heating the semiconductor device to a second temperature, the second temperature being greater than the first temperature, for a second period of time which is less than the first period of time and sufficient to remove chemically-adsorbed water from the semiconductor device, such that a density of the upper interface region is greater than a density of the lower bulk region, and an amount of silicon and oxygen in a composition of the upper interface region is greater than an amount of silicon and oxygen in a composition of the lower bulk region, wherein the first temperature comprises a temperature between 100° C. and 200° C. and the first period of time comprises a period of approximately 12 hours to 48 hours, and wherein the second temperature comprises a temperature in a range from 350° C. to 400° C. and the second period of time comprises a period of approximately 0.5 hours to 2 hours.