| 摘要 |
<p>In a multilayer positive temperature coefficient thermistor of the present invention, semiconductor ceramic layers contain a BaTiO 3 -based ceramic material as a primary component, the ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006, and at least one element selected from the group consisting of Eu, Gd, Tb, Dy, Y, Ho, Er, and Tm is contained as a semiconductor dopant in the range of 0.1 to 0.5 molar parts with respect to 100 molar parts of Ti. Accordingly, even when the semiconductor ceramic layers have a low actual-measured sintered density in the range of 65% to 90% of a theoretical sintered density, a multilayer positive temperature coefficient thermistor having a sufficiently high rate of resistance change and a high rising coefficient of resistance at the Curie temperature of more can be realized.</p> |
