Silicon carbide power device equipped with termination structure

摘要

A silicon carbide power device equipped with termination structure comprises a silicon carbide substrate, a power element structure and a termination structure. The silicon carbide substrate contains a drift layer which has a first conductivity and includes an active zone and a termination zone. The power element structure is located in the active zone. The termination structure is located in the termination zone and has a second conductivity, and includes at least one first doped ring abutting and surrounding the power element structure and at least one second doped ring surrounding the first doped ring. The first doped ring has a first doping concentration smaller than that of the second doped ring and a first doping depth greater than that of the second doped ring, thereby can increase the breakdown voltage of the silicon carbide power device.

主权项

1. A silicon carbide power device equipped with termination structure, comprising:
a silicon carbide substrate including a drift layer which includes a first conductivity and an active zone and a termination zone surrounding the active zone; a power element structure located in the active zone; and a termination structure which is located in the termination zone and includes a second conductivity different from the first conductivity, and includes at least one first doped ring abutting and surrounding the power element structure, at least one second doped ring surrounding the first doped ring and at least one ancillary ring which overlaps the first doped ring; wherein the first doped ring has a first doping concentration smaller than that of the second doped ring and a first doping depth greater than that of the second doped ring, and wherein the ancillary ring has a third doping depth smaller than the first doping depth and a third doping concentration greater than the first doping concentration.