| 发明名称 | ESD transistor | ||
| 摘要 | An ESD transistor is provided. The ESD transistor includes a collector region on a substrate, a base contact region on the substrate, an emitter region spaced apart from the base contact region, a sink region disposed vertically below the collector region, and a buried layer disposed horizontally under the sink region. | ||
| 申请公布号 | US9018705(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201414166378 | 申请日期 | 2014.01.28 |
| 申请人 | MagnaChip Semiconductor, Ltd. | 发明人 | Hwang Kyong Jin |
| 分类号 | H01L23/62;H01L29/00;H01L21/331;H01L29/73 | 主分类号 | H01L23/62 |
| 代理机构 | NSIP Law | 代理人 | NSIP Law |
| 主权项 | 1. An ESD transistor comprising: a collector region on a substrate; a base contact region on the substrate; an emitter region spaced apart from the base contact region; a sink region disposed vertically below the collector region; and a buried layer disposed under the sink region, wherein the ESD transistor is configured so that stress applied passes the collector region, the buried layer, and the emitter region in that order. | ||
| 地址 | Cheongju-si KR | ||