Wafer processing apparatus with heated, rotating substrate support

摘要

A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

主权项

1. A semiconductor substrate processing apparatus, comprising:
a reaction chamber defining a reaction space, a substrate support assembly, including:
a substrate support defining an outer support surface for supporting a substrate or substrate carrier thereon; anda heater comprising a heat dissipating portion that is disposed within the substrate support and that extends underneath and in a direction parallel to the support surface,a base assembly including a doorplate for sealing the reaction space of the apparatus, said substrate support being rotatably mounted around a rotation axis that extends through said support surface, such that the support surface is rotatable relative to the heat dissipating portion of the heater, wherein the substrate support is connected to the base assembly through a first bearing that facilitates rotation of the substrate support relative to the base assembly around the rotation axis.