| 摘要 |
The present invention is related to a film deposition method and a device for the film deposition that increases the formation thickness of the film deposition by improving the gas displacement efficiency. The present invention supplies the processing gas to the processing space intermittently, and purges the processed gas after supply so that the substrate to be processed to form a thin film layer of deposition by chemical reactions on the other processing gases repeatedly. Through this atomic layer deposition method, one can supply the purge gas constantly to the processing space while supplying other processing gases intermittently in turn so that the quantity of the purge gas supplied within the processing space can form the thin film deposition regardless of the pressure level within the processing container. |
