Stress sensor for measuring mechanical stresses in a semiconductor chip and stress compensated hall sensor

摘要

A stress sensor (1) for detecting mechanical stress in a semiconductor chip (2) has a Wheatstone bridge formed by four integrated resistors R1 to R4, the resistors R1 and R4 being p-type resistors and the resistors R2 and R3 being n-type resistors.

主权项

1. A stress sensor for detecting mechanical stress in a semiconductor chip, the stress sensor having four resistors R1 to R4 integrated in an active surface of the semiconductor chip, the resistors R1 to R4 forming a Wheatstone bridge, in which the resistors R1 and R2 are connected in series, the resistors R3 and R4 are connected in series and in parallel to the resistors R1 and R2 the resistors R1 and R3 have a common node and the resistors R2 and R4 have a common node, the resistors R1 and R4 being p-type resistors and the resistors R2 and R3 being n-type resistors wherein
each of the n-type resistors R2 and R3 consists of oblong resistor sections, which are connected to one another directly or via electrical conductors, each of the resistor sections has a predetermined orientation in the plane defined by the active surface of the semiconductor chip, and a sum of the resistance values of all resistor sections which have a first orientation and belong to the same resistor R2 or R3 and a sum of the resistance values of all resistor sections which have a second orientation rotated by 90° to the first orientation and also belong to the same resistor R2 or R3 have a same nominal value.