发明名称 Magnetic element electrode lamination
摘要 Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive stack that has an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination.
申请公布号 US9017832(B2) 申请公布日期 2015.04.28
申请号 US201313756044 申请日期 2013.01.31
申请人 Seagate Technology LLC 发明人 Singleton Eric Walter;Tan Liwen;Yi Jae-Young
分类号 G11B5/39;G01R33/00;G11C11/00;G11B5/62;G01R33/09;G11C11/14 主分类号 G11B5/39
代理机构 Hall Estill Attorneys at Law 代理人 Hall Estill Attorneys at Law
主权项 1. A magnetic element comprising a magnetoresistive stack comprising an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination, the magnetically free layer comprising a first dead layer portion that is magnetically unresponsive, the transition metal layer contacting a magnetic shield, the electrode layer of the electrode lamination and the first dead layer portion.
地址 Cupertino CA US