Semiconductor structure and method of forming the same

摘要

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. A carrier channel is located between the first III-V compound layer and the second III-V compound layer. A source feature and a drain feature are disposed on the second III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A carrier channel depleting layer is disposed on the second III-V compound layer. The carrier channel depleting layer is deposited using plasma and a portion of the carrier channel depleting layer is under at least a portion of the gate electrode.

主权项

1. A semiconductor structure comprising:
a first III-V compound layer; a second III-V compound layer disposed on the first III-V compound layer and different from the first III-V compound layer in composition, wherein a carrier channel is located between the first III-V compound layer and the second III-V compound layer; a dielectric cap layer over the second III-V compound layer; a source feature and a drain feature disposed on a top surface of the second III-V compound layer; a gate electrode disposed over the second III-V compound layer between the source feature and the drain feature; a carrier channel depleting layer disposed on the second III-V compound layer, wherein a portion of the carrier channel depleting layer is under at least a portion of the gate electrode; and a protection layer over the dielectric cap layer and over the source feature and contacting a sidewall surface of the source feature farthest from the gate electrode and over the drain feature and contacting a sidewall surface of the drain feature farthest from the gate electrode, wherein the carrier channel depleting layer extends over the protection layer.