| 主权项 |
1. A semiconductor light emitting device comprising:
a member that includes a GaAs layer; a metal layer disposed above the GaAs layer; and a light emitting diode structure including a patterned layer disposed above the metal layer, a p type cladding layer disposed above the patterned layer, a multi-quantum well layer disposed above the p type cladding layer, an n type cladding layer disposed above the multi-quantum well layer, and a window layer disposed above the n type cladding layer, wherein the GaAs layer and the light emitting diode structure are bonded by using the metal layer, wherein the patterned layer includes a layer of insulation having a predetermined thickness and having a pattern of apertures, the apertures being disposed at a predetermined pitch, wherein the patterned layer additionally includes metal contact members in the apertures of the layer of insulation, the metal contact members having a width in a range from 5 μm to 11 μm and having a height that is substantially the same as the thickness of the layer of insulation, the metal contact members including Au, and wherein the multi-quantum well layer is composed of a multi-quantum well structure formed by laminating a heterojunction pair composed of a GaAs/GaAlAs layer, the layer of insulation being transparent with respect to a light-emitting wavelength from the multi-quantum well layer. |
