| 发明名称 | Nonvolatile semiconductor memory device and operating method of the same | ||
| 摘要 | According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element. The variable resistance element comprises a laminated structure including a phase-change element which has at least two different crystalline resistance states by varying a crystalline state, and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state. | ||
| 申请公布号 | US9019777(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201313787633 | 申请日期 | 2013.03.06 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Nakai Tsukasa;Ozeki Jyunichi;Aoki Nobutoshi |
| 分类号 | G11C11/00;G11C11/02;G11C5/06;G11C13/00;G11C11/16;G11C14/00;G11C7/10;G11C11/56 | 主分类号 | G11C11/00 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A nonvolatile semiconductor memory device comprising: a semiconductor substrate; and a memory cell which is arranged on the semiconductor substrate and comprises a variable resistance element, wherein the variable resistance element comprises a laminated structure including: a phase-change element which has at least two different crystalline resistance states by varying a crystalline state and includes a chalcogenide material; and a magnetoresistive element which has at least two different magnetization resistance states by varying a magnetization state, and applies or does not apply a magnetic field to the phase-change element in accordance with the magnetization state. | ||
| 地址 | Tokyo JP | ||