| 摘要 |
A chip stacked semiconductor package according to the technical concept in the present invention comprises: a first chip comprising a first front, a first back side opposite to the first, and a first connecting member on the first front; a second chip comprising a second front, a second back side opposite to the first, a second connecting member formed in the second front opposite to the first front, and a first through-silicon via (TSV) electrically connected to the second connecting member. The present invention includes a first sealant formed so as to fill between the first second connecting members between the first and second fronts, and the first connecting member of the first chip is formed in a mirror symmetrical type with respect to the second connecting member of the second chip. |
