METHOD FOR PATTERNING A SEMICONDUCTOR SUBSTRATE

摘要

Embodiments of the present disclosure provide methods for patterning rectangular features with a sequence of lithography, atomic layer deposition (ALD) and etching. Embodiment of the present disclosure includes forming first line clusters along a first direction and second line clusters over the first line clusters in a direction traversing the first direction. The first and second line clusters both include core lines formed from a core material, spacers formed from first and second materials by ALD and etching. After formation of the first and second line clusters, rectangular openings can be formed by selectively etching one or two of the core material, the first material or the second material.

主权项

1. A method for patterning a substrate, comprising:
forming a hardmask layer over the substrate; forming first line clusters along a first direction, wherein the first line clusters are separated by parallel gaps, each of the first line clusters comprises a core line formed from a core material and at least first spacers formed from a first material; forming a gap fill layer to planarize the first line clusters; forming second line clusters over the gap fill layer along the second direction, wherein the second direction substantially traverses the first direction, each of the second line clusters comprises a traverse core line and at least first traverse spacers; and selectively etching the core material or the first material.