发明名称 |
VERTICAL LIGHT EMITTING DIODE AND FABRICATION METHOD |
摘要 |
A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function. |
申请公布号 |
US2015108534(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414588001 |
申请日期 |
2014.12.31 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
ZENG XIAOQIANG;CHAO CHIH-WEI;CHEN SHUNPING;YANG JIANJIAN;LIN DAQUAN |
分类号 |
H01L33/14;H01L33/38;H01L33/00;H01L33/20 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
1. A vertical light emitting diode (LED), comprising:
a conductive substrate including a front surface and a back surface, wherein the front main surface has a patterned concave-convex structure; an anisotropic conductive material layer disposed over the front surface of the conductive substrate with the patterned concave-convex structure, and forming electrical coupling with a convex portion of the conductive substrate and non-electrical coupling with a concave portion of the conductive substrate, thereby forming a current blocking structure; and a light emitting epitaxial structure formed over the anisotropic conductive material layer. |
地址 |
Xiamen CN |