发明名称 VERTICAL LIGHT EMITTING DIODE AND FABRICATION METHOD
摘要 A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.
申请公布号 US2015108534(A1) 申请公布日期 2015.04.23
申请号 US201414588001 申请日期 2014.12.31
申请人 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. 发明人 ZENG XIAOQIANG;CHAO CHIH-WEI;CHEN SHUNPING;YANG JIANJIAN;LIN DAQUAN
分类号 H01L33/14;H01L33/38;H01L33/00;H01L33/20 主分类号 H01L33/14
代理机构 代理人
主权项 1. A vertical light emitting diode (LED), comprising: a conductive substrate including a front surface and a back surface, wherein the front main surface has a patterned concave-convex structure; an anisotropic conductive material layer disposed over the front surface of the conductive substrate with the patterned concave-convex structure, and forming electrical coupling with a convex portion of the conductive substrate and non-electrical coupling with a concave portion of the conductive substrate, thereby forming a current blocking structure; and a light emitting epitaxial structure formed over the anisotropic conductive material layer.
地址 Xiamen CN