| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of high-speed operation.SOLUTION: A surface-emitting semiconductor laser includes an n-type lower DBR, an active region 104, and a p-type upper DBR on an n-type GaAs substrate. The active region 104 includes a quantum well structure having quantum well light-emitting layers 104A composed of InGaAs and barrier layers 104B composed of GaAsP, and spacer layers 104C formed on and under the quantum well structure and composed of GaInP. |
