| 摘要 |
The present invention uses a detecting plate having a transparent substrate on which a single-crystal Si thin film layer, a transparent thin film layer, and a sample capturing layer for capturing a sample are provided. The present invention comprises a light directing mechanism for directing light through said transparent substrate of the detecting plate, and a light detection mechanism for detecting reflected light of the incident light from the detecting plate. The present invention is configured so that a change in absorbance occurs at the sample capturing layer or in the vicinity thereof, when said sample is captured on said sample capturing layer. The wavelengths of said incident light are determined in a range of wavelengths within which said change in absorbance occurs. In this way, the sample is detected by means of measuring a significant change in intensity of the reflected light which is generated when the sample is captured on the sample capturing layer. |
