| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, and a template for lithography, by which variations in the thickness of a residual film of a resist on a base material can be suppressed.SOLUTION: The method for manufacturing a semiconductor device comprises steps of: supplying a resist on a base material; pressing a template to the resist on the base material, the template including a first template region having a device pattern and a second template region adjoining to the device pattern and having a column pattern; and curing the resist so as to transfer the device pattern onto the resist on a first material region of the base material corresponding to the first template region, and simultaneously transfer the column pattern onto the resist on a second material region of the base material corresponding to the second template region. The method further includes a step of transferring the device pattern onto the resist supplied to the second material region, and in this step, the column is brought into contact with the first template region. |
