Halbleiterbauelement mit einer orientierten Schicht und Verfahren zu seiner Herstellung

摘要

The invention relates to a method (50) for producing an oriented layer (12) on a substrate (10), the layer (12) containing or consisting of at least one connecting semiconductor with a wurtzite structure, a nucleation layer (11) being deposited on the substrate (10) during a first method step (52) by means of MBE and/or MOCVD and/or MOVPE and the oriented layer (12) being deposited in a subsequent second method step (55) by means of a PVD process. The invention further relates to a semiconductor element comprising a substrate (10) and an oriented layer (12) that contains or consists of at least one connecting semiconductor with a wurtzite structure, a nucleation layer (11) being arranged between the substrate (10) and the oriented layer (12) and being approximately 5nm to 20nm thick.