| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with a low driving voltage.SOLUTION: There is provided the semiconductor light-emitting element including an n-type semiconductor layer, an electrode, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode. The p-type semiconductor layer includes a p-side contact layer in contact with the electrode. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer is provided between the p-side contact layer and the light-emitting layer, and includes a p-type layer having a p-type impurity concentration lower than that of the p-side contact layer. The p-side contact layer includes a plurality of pyramid-shaped projections protruding in a first direction going from the n-type semiconductor layer to the p-type semiconductor layer. The density of the plurality of projections in a plane perpendicular to the first direction is 5×10/cmor more to 2×10/cmor less. |
