FILM DEPOSITION METHOD, AND FILM DEPOSITION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus which are capable of making substitution efficiency of gas in a processing space satisfactory in depositing a film by an atomic layer deposition method to secure satisfactory film thickness controllability.SOLUTION: In depositing a predetermined film by an atomic layer deposition method in which an operation that a plurality of process gases are sequentially and intermittently supplied into a processing space and each process gas is purged by purge gas after supplying the process gas, and the plurality of process gases are reacted on a substrate to be processed to form a thin unit film is repeated for a plurality of times to form a film of a predetermined thickness, the plurality of process gases are sequentially and intermittently supplied while purge gas is constantly supplied into the processing space, a flow rate of the purge gas supplied into processing space is set to a flow rate at which a film can be deposited by a deposition mode that mainly consists of a mode where the thin unit film is deposited regardless of pressure inside a processing container.