| 摘要 |
The present invention provides a method of manufacturing an asymmetric FinFET, comprising: a. providing a substrate (101); b. forming a fin (102) on the substrate, the width of the fin being the width of a second channel; c. performing shallow trench isolation; d. forming pseudo-gate stacks above and on a side of a channel in the middle of the fin, and forming a source/drain region at two ends of the fin respectively; e. depositing an interlayer dielectric layer to cover the pseudo-gate stack and the source/drain region, performing planarization, and exposing the pseudo-gate stack; f. removing the pseudo-gate stack, and exposing a channel portion; g. forming an etch stop layer (106) on the top of the channel; h. covering a photoresist (400) on a semiconductor structure on a side of source end; i. thinning the channel that is not covered by the photoresist along two sides of the channel in a direction perpendicular to a surface on a side of the channel till the width of a first channel; and j. removing the etch stop layer. The present invention effectively inhibits adverse influence of a short channel effect, and improves performance of a device. |
