MEMORY AND MANUFACTURING METHOD THEREOF

摘要

A memory comprises a substrate, a plurality of bit line stacks of alternate semiconductor layers and first insulating layers, a memory layer, a plurality of second insulating layers, and a plurality of string select structures. The bit line stacks are disposed over the substrates and arranged in parallel. Each of the bit line stacks has two opposite sidewalls. The memory layer is disposed on the sidewalls of the bit line stacks. The second insulating layers are disposed on the bit line stacks, respectively. The string select structures are disposed correspondingly to the bit line stacks. Each of the string select structures comprises a first conductive layer and two liners, the semiconductor layer is disposed on a corresponding second insulating layer, and the two liners are disposed respectively along the two opposite sidewalls of a corresponding bit line stack and connected the first conductive layer.

主权项

1. A memory, comprising:
a substrate; a plurality of bit line stacks of alternate semiconductor layers and first insulating layers, the bit line stacks disposed over the substrate and arranged in parallel, each of the bit line stacks having two opposite sidewalls; a memory layer disposed on the sidewalls of the bit line stacks; a plurality of second insulating layers respectively disposed on the bit line stacks; and a plurality of string select structures disposed correspondingly to the bit line stacks, each of the string select structures comprising:
a first conductive layer disposed on corresponding one of the second insulating layers; andtwo liners disposed respectively along the two opposite sidewalls of corresponding one of the bit line stacks and connected with the first conductive layer.