PHOTOLITHOGRAPHIC, THICKNESS NON-UNIFORMITY, COMPENSATION FEATURES FOR OPTICAL PHOTOLITHOGRAPHIC SEMICONDUCTOR STRUCTURE FORMATION

摘要

A semiconductor structure having a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts; and a photolithographic, thickness non-uniformity, compensation feature, disposed on the surface substrate off of the active semiconductor region. In one embodiment the feature comprises pads on the surface of the substrate and off of the active semiconductor region.

主权项

1. A method for forming a semiconductor structure, such structure having: a substrate; an active device formed in an active semiconductor region of the substrate, the active device having a control electrode for controlling a flow of carriers through the active semiconductor region between a pair of electrical contacts, the method comprising:
forming a photoresist layer over the pair of contacts prior to formation of the gate electrode; and providing a photolithographic, thickness non-uniformity, compensation feature prior to the forming of the photoresist layer, the feature being disposed on the surface substrate off of the active semiconductor region for preventing pooling of the photoresist layer on the active semiconducting region.