SEMICONDUCTOR DEVICE

摘要

A transistor having a trench gate is controlled such that values settable as on current of the transistor are not discrete. A first transistor includes a plurality of first trenches, a first gate insulating film, and a first gate electrode. The first trenches are provided on a substrate, and are arranged side by side in a plan view. The first gate insulating film is provided on at least a side face of each of the first trenches, and over each of substrate regions located between the first trenches. The first gate electrode is embedded in each of the first trenches, and is provided over each of regions of the first gate insulating film located between the first trenches. At least one of the first trenches is formed as a circular trench in a plan view.

主权项

1. A semiconductor device, comprising:
a substrate; and a first transistor formed using the substrate, the first transistor including:
a plurality of first trenches that are provided over the substrate, and are arranged side by side in a plan view;a first gate insulating film that is provided over at least a side face of each of the first trenches, and over each of substrate regions located between the first trenches; anda first gate electrode that is embedded in each of the first trenches, and is provided over each of regions of the first gate insulating film located between the first trenches, wherein at least one of the first trenches is formed as a circular trench in a plan view, the circular trench having a visible outline 50% or more of which is formed of a curved line being outwardly convex.