| 摘要 |
Disclosed are a novel thermoelectric material having excellent thermoelectric conversion performance, and a method for manufacturing the same. A compound semiconductor according to the present invention may be represented by following chemical formula 1: CuxSe1-yXy,where X is at least one selected from the group consisting of F, Cl, Br and I, 2<x≤2.6 and 0<y<1. |
