PLASMA-ASSISTED ATOMIC LAYER EPITAXY OF CUBIC AND HEXAGONAL INN FILMS AND ITS ALLOYS WITH AIN AT LOW TEMPERATURES
摘要
<p>Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.</p>
申请公布号
EP2862199(A1)
申请公布日期
2015.04.22
申请号
EP20130806353
申请日期
2013.06.13
申请人
THE GOVERNMENT OF THE U.S.A., AS REPRESENTED BY THE SECRETARY OF THE NAVY
发明人
NEPA, NEERAJ;EDDY, CHARLES, R.;MAHADIK, NADEEMMULLAH;QADRI, SYED, B.;MEHL, MICHAEL, J.
