发明名称 |
METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE |
摘要 |
<p>It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.</p> |
申请公布号 |
EP2140480(A4) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20080722544 |
申请日期 |
2008.03.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
JINBO, YASUHIRO;SHOJI, HIRONOBU;OHNUMA, HIDETO;YAMAZAKI, SHUNPEI |
分类号 |
H01L21/84;H01L21/265;H01L21/336;H01L21/762 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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