| 摘要 |
1,005,070. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Feb. 22, 1963 [March 1, 1962], No. 8001/62. Heading H1K. In making a semi-conductor device, in particular a tunnel diode, a mono-crystalline body consisting of a first zone of intrinsic semiconductor material and a second zone of one conductivity type is first formed. The region including part of the boundary between the first and second zones is then doped to form a third zone of conductivity type opposite to that of the second zone with a junction between the second and third zones, and the body is finally etched to reduce the area of this junction to the required size. In one example a slice of germanium 3, Fig. 2, degeneratively doped with gallium to provide p + conductivity type, has a layer 2 of intrinsic germanium formed on it epitaxially. A pellet 4, of an alloy of antimony and arsenic, is then alloyed into the wafer to form an + conductivity type zone 5 at the boundary region between the zones 2, 3. An ohmic contact 7 is then alloyed to the opposite side of the wafer and zones 3 and 5 are finally etched electrolytically, or chemically, using suitable masking, to reduce the area of the junction 6 as required, as shown in Fig. 3. |
