发明名称 |
SOLID-STATE IMAGE CAPTURE DEVICE |
摘要 |
A solid-state imaging device 1 has: a semiconductor substrate 20 having a principal surface 20a and a principal surface 20b opposed to each other, and provided with a plurality of photosensitive regions 3 on the principal surface 20a side; and an insulating film 61 having a principal surface 61a and a principal surface 61b opposed to each other, and arranged on the semiconductor substrate 20 so that the principal surface 61a is opposed to the principal surface 20a. A cross section parallel to a thickness direction of the semiconductor substrate 20, of a region corresponding to each photosensitive region 3 in the principal surface 20a of the semiconductor substrate 20 is a corrugated shape in which concave curves and convex curves are alternately continuous. A cross section parallel to a thickness direction of the insulating film 61, of a region corresponding to each photosensitive region 3 in the principal surface 61a of the insulating film 61 is a corrugated shape in which concave curves and convex curves are alternately continuous corresponding to the principal surface 20a. The principal surface 61b of the insulating film 61 is flat. |
申请公布号 |
EP2863437(A1) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20130807633 |
申请日期 |
2013.03.01 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
TAKAGI, SHIN-ICHIRO;YONETA, YASUHITO;SUGIMOTO, KENICHI;SUZUKI, HISANORI;MURAMATSU, MASAHARU |
分类号 |
H01L27/14;H01L27/146;H01L27/148;H01L31/0236 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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