发明名称 |
METHOD FOR DEPOSITING A GROUP III NITRIDE SEMICONDUCTOR FILM |
摘要 |
A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate. |
申请公布号 |
EP2862198(A1) |
申请公布日期 |
2015.04.22 |
申请号 |
EP20130739811 |
申请日期 |
2013.06.14 |
申请人 |
OERLIKON ADVANCED TECHNOLOGIES AG |
发明人 |
CASTALDI, LORENZO;KRATZER, MARTIN;FELZER, HEINZ;MAMAZZA, ROBERT, JR. |
分类号 |
H01L21/20;H01L21/02;H01L21/3065 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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