Methods of forming moisture barrier capacitors in semiconductor components

摘要

Structures and methods of forming moisture barrier capacitor on a semiconductor component are disclosed. The capacitor is located on the periphery of a semiconductor chip and includes an inner plate electrically connected to a voltage node, an outer plate with fins for electrically connecting to a different voltage node.

主权项

1. A method of forming a moisture barrier capacitor, the method comprising:
forming an outer plate and an inner plate of the moisture barrier capacitor, the capacitor disposed on a periphery of a chip edge; forming electrical connections to the outer plate of the capacitor to an active circuitry through a upper layer not porous to moisture, wherein the outer plate is electrically connected by fins, wherein at least a portion of the fins are disposed above the inner plate and embedded in the upper layer comprising oxide or nitride region; forming electrical connections to the inner plate of the capacitor to the active circuitry; and forming a moisture barrier structure in the outer plate of the moisture barrier capacitor.